FDMC8010 Overview
Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Key Features
- Max RDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A
- Max RDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A
- High Performance Technology for Extremely Low RDS(on)
- These Devices are Pb-Free and are RoHS Compliant
