Click to expand full text
DATA SHEET www.onsemi.com
MOSFET – N-Channel, POWERTRENCH)
30 V, 75 A, 1.3 mW
FDMC8010
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Features
• Max RDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A • Max RDS(on) = 1.8 mW at VGS = 4.
FDMC8010 Datasheet
