FDMC8010 - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Key Features

Max RDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A.
Max RDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A.
High Performance Technology for Extremely Low RDS(on).
These Devices are Pb.
Free and are RoHS Compliant.

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FDMC8010 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC8010
Manufacturer	onsemi
File Size	544.42 KB
Description	N-Channel MOSFET
Datasheet	FDMC8010 Datasheet

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Other Datasheets by onsemi

Part Number	Description
FDMC8010DC	N-Channel MOSFET
FDMC8010ET30	N-Channel MOSFET
FDMC8015L	N-Channel MOSFET
FDMC8030	Dual N-Channel MOSFET
FDMC8032L	Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 30 V, 75 A, 1.3 mW FDMC8010 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Features • Max RDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A • Max RDS(on) = 1.8 mW at VGS = 4.