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FDMC8010DC - N-Channel MOSFET

General Description

This N

POWERTRENCH process.

to Ambient

Key Features

  • DUAL COOL Top Side Cooling PQFN Package.
  • Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A.
  • Max rDS(on) = 1.74 mW at VGS = 4.5 V, ID = 32 A.
  • High Performance Technology for Extremely Low rDS(on).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, DUAL COOL) 33, POWERTRENCH) 30 V, 157 A, 1.28 mW FDMC8010DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • DUAL COOL Top Side Cooling PQFN Package • Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A • Max rDS(on) = 1.74 mW at VGS = 4.