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MOSFET – N-Channel, DUAL COOL) 33, POWERTRENCH)
30 V, 157 A, 1.28 mW
FDMC8010DC
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Features
• DUAL COOL Top Side Cooling PQFN Package
• Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A • Max rDS(on) = 1.74 mW at VGS = 4.
FDMC8010DC Datasheet
