FDMC8010DC Overview
Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient.
Key Features
- DUAL COOL Top Side Cooling PQFN Package
- Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A
- Max rDS(on) = 1.74 mW at VGS = 4.5 V, ID = 32 A
- High Performance Technology for Extremely Low rDS(on)
- These Devices are Pb-Free and are RoHS Compliant
