FDMC8010DC Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient.
FDMC8010DC Key Features
- DUAL COOL Top Side Cooling PQFN Package
- Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A
- Max rDS(on) = 1.74 mW at VGS = 4.5 V, ID = 32 A
- High Performance Technology for Extremely Low rDS(on)
- These Devices are Pb-Free and are RoHS pliant