FDMC8010 Description
April 2014 Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications...
FDMC8010 Key Features
- Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
- Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant