FDMC8010 Overview
Description
April 2014 - Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A - Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A - High performance technology for extremely low rDS(on) - Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
