Datasheet Summary
MOSFET
- Dual N-Channel, POWERTRENCH)
40 V, 12 A, 10 mW
General Description This device includes two 40 V N- Channel MOSFETs in a dual
Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
Features
- Max rDS(on) = 10 mW at VGS = 10 V, ID = 12 A
- Max rDS(on) = 14 mW at VGS = 4.5 V, ID = 10 A
- Max rDS(on) = 28 mW at VGS = 3.2 V, ID = 4 A
- This Device is Pb- Free and is RoHS pliant
Applications
- Battery Protection
- Load Switching
- Point of Load
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDS Drain to Source Voltage
VGS Gate to Source Voltage
(Note 4)
±12
ID Drain...
