FDMC8200 Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDMC8200 Features

* Q1: N

* Channel

* Max rDS(on) = 20 mW at VGS = 10 V, ID = 6 A

* Max rDS(on) = 32 mW at VGS = 4.5 V, ID = 5 A

* Q2: N

* Channel

* Max rDS(on) = 9.5 mW at VGS = 10 V, ID = 9 A

* Max rDS(on) = 13.5 mW at VGS = 4.5 V, ID = 7 A

* This

FDMC8200 General Description

This device includes two specialized N *Channel MOSFETs in a dual Power33 (3 mm x 3 mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to pro.

FDMC8200 Datasheet (308.13 KB)