FDMC8462 datasheet, mosfet equivalent, ON Semiconductor

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FDMC8462 Features and benefits

* Max rDS(on) = 5.8 mW at VGS = 10 V, ID = 13.5 A Max rDS(on) = 8.0 mW at VGS = 4.5 V, ID = 11.8 A
* Low Profile − 1 mm Max in Power 33
* 100% UIL Tested
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FDMC8462 Application

* DC − DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VD.

FDMC8462 Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features
* Max rDS(on) = 5.8 mW at VGS = 10 V, ID.

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