Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
40 V, 20 A, 5.8 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 5.8 mW at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 8.0 mW at VGS = 4.5 V, ID = 11.8 A
- Low Profile
- 1 mm Max in Power 33
- 100% UIL Tested
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC
- DC...
