Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
25 V, 40 A, 5.7 mW
General Description This N- Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
- Max rDS(on) = 5.7 mW at VGS = 4.5 V, ID = 16.5 A
- State- of- the- art Switching Performance
- Lower Output Capacitance, Gate Resistance, and Gate Charge
Boost Efficiency
- Shielded Gate Technology Reduces Switch Node Ringing and
Increases Immunity to EMI and Cross Conduction
-...
