FDMC8588DC Overview
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 17 A State-of-the-art switching performance Lower output capacitance, gate resistance, and gate charge boost efficiency Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to...
FDMC8588DC Key Features
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 17 A
- State-of-the-art switching performance
- Lower output capacitance, gate resistance, and gate charge boost efficiency
- Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
