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FDMC8588 - N-Channel MOSFET

Description

This N

the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • Max rDS(on) = 5.7 mW at VGS = 4.5 V, ID = 16.5 A.
  • State.
  • of.
  • the.
  • art Switching Performance.
  • Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency.
  • Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity to EMI and Cross Conduction.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDMC8588

Datasheet Details

Part number FDMC8588
Manufacturer ON Semiconductor
File Size 377.29 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8588 Datasheet
Additional preview pages of the FDMC8588 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 25 V, 40 A, 5.7 mW FDMC8588 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Features • Max rDS(on) = 5.7 mW at VGS = 4.5 V, ID = 16.
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