FDMC86012 Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC86012 Features

* Max RDS(on) = 2.7 mW at VGS = 4.5 V, ID = 23 A

* Max RDS(on) = 4.7 mW at VGS = 2.5 V, ID = 17.5 A

* High Performance Technology for Extremely low RDS(on)

* Termination is Lead

* free

* 100% UIL Tested

* Pb

* Free, Halide Free and RoHS Com

FDMC86012 General Description

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent.

FDMC86012 Datasheet (541.13 KB)