Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
100 V, 7.5 A, 103 mW
FDMC86116LZ, FDMC86116LZ-L701
General Description This N- Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance. G- S zener has been added to enhance ESD voltage level.
Features
- Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A
- Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
- HBM ESD Protection Level > 3 kV Typical (Note 1)
- 100% UIL Tested
- These Devices are Pb- Free and are RoHS pliant
Applications
- DC- DC Conversion
DATA SHEET...
