FDMC86116LZ Datasheet - ON Semiconductor

N-Channel Power MOSFET

FDMC86116LZ Features

* Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A

* Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A

* HBM ESD Protection Level > 3 kV Typical (Note 1)

* 100% UIL Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

* DC

FDMC86116LZ General Description

This N *Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on *state resistance and yet maintain superior switching performance. G *S zener has been added to enh.

FDMC86116LZ Datasheet (576.97 KB)