FDMC86116LZ Description
Shielded Gate MOSFET Technology Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A HBM ESD protection level > 3 KV typical (Note 4) 100% UIL Tested RoHS pliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state...
FDMC86116LZ Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- HBM ESD protection level > 3 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant
- DC Conversion