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FDMC86116LZ - MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A HBM ESD protection level > 3 KV typical (Note 4) 100% UIL Tested RoHS Compliant This N-Channel logic Level MOSF

Key Features

  • General.

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FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 7.5 A, 103 mΩ November 2013 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A „ HBM ESD protection level > 3 KV typical (Note 4) „ 100% UIL Tested „ RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.