Datasheet4U Logo Datasheet4U.com

FDMC86116LZ-L701 - N-Channel Power MOSFET

Download the FDMC86116LZ-L701 datasheet PDF. This datasheet also covers the FDMC86116LZ variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N

onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

S zener has been added to enh

Key Features

  • Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A.
  • Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A.
  • HBM ESD Protection Level > 3 kV Typical (Note 1).
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMC86116LZ-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDMC86116LZ MOSFET Fairchild Semiconductor
FDMC86102 N-Channel Power Trench MOSFET Fairchild Semiconductor
FDMC86102L MOSFET Fairchild Semiconductor
FDMC86102LZ N-Channel Power Trench MOSFET Fairchild Semiconductor
FDMC86106LZ N-Channel Power Trench MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMC86116LZ N-Channel Power MOSFET
FDMC86102 N-Channel MOSFET
FDMC86102L N-Channel MOSFET
FDMC86102LZ N-Channel MOSFET
FDMC86139P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 7.5 A, 103 mW FDMC86116LZ, FDMC86116LZ-L701 General Description This N−Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features • Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A • Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A • HBM ESD Protection Level > 3 kV Typical (Note 1) • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Conversion DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.