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FDMC86102L - N-Channel MOSFET

General Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A.
  • Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 18 A, 23 mW FDMC86102L General Description This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A • Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.