FDMC86102L
Overview
This N-Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
- Shielded Gate MOSFET Technology
- Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
- Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A
- Low Profile - 1 mm Max in Power 33
- Pb-Free, Halide Free and RoHS Compliant
