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FDMC86106LZ - N-Channel Power Trench MOSFET

General Description

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.

G-S zener has been added to enhance ESD voltage level.

Key Features

  • Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A.
  • Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A.
  • HBM ESD protection level > 3 KV typical (Note 4).
  • 100% UIL Tested.
  • RoHS Compliant General.

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FDMC86106LZ N-Channel Power Trench® MOSFET December 2010 FDMC86106LZ N-Channel Power Trench® MOSFET 100 V, 7.5 A, 103 mΩ Features „ Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A „ HBM ESD protection level > 3 KV typical (Note 4) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Application „ DC - DC Conversion Top Pin 1 S S S G Bottom 5 6 7 8 D D D D D 4 3 2 1 G S S S D D D MLP 3.3x3.