FDMC86106LZ Datasheet | Fairchild Semiconductor

FDMC86106LZ N-Channel Power Trench® MOSFET December 2010 N-Channel Power Trench® MOSFET 100 V, 7.5 A, 103 mΩ Features - Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A - Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A - HBM ESD protection level > 3 KV typical (Note 4) - 100% UIL Tested - RoHS pliant General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Application - DC - DC Conversion Top Pin 1 S S S G Bottom 5 6 7 8 D D D D...