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FDMC86106LZ Datasheet N-channel Power Trench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMC86106LZ N-Channel Power Trench® MOSFET December 2010 FDMC86106LZ N-Channel Power Trench® MOSFET 100 V, 7.

General Description

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.

G-S zener has been added to enhance ESD voltage level.

Application „ DC - DC Conversion Top Pin 1 S S S G Bottom 5 6 7 8 D D D D D 4 3 2 1 G S S S D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 7.5 9.6 3.3 15 12 19 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.5 53 °C/W Package Marking and Ordering Information Device Marking FDMC86106Z Device FDMC86106LZ Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDMC86106LZ Rev.C 1 .fairchildsemi.

Key Features

  • Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A.
  • Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A.
  • HBM ESD protection level > 3 KV typical (Note 4).
  • 100% UIL Tested.
  • RoHS Compliant General.

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FDMC86106LZ Distributor