Datasheet Summary
FDMC86102LZ N-Channel Power Trench® MOSFET
April 2011
N-Channel Power Trench® MOSFET
100 V, 22 A, 24 mΩ
Features
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
- Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
- HBM ESD protection level > 6 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant
General Description
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Application
- DC
- DC Switching
Top Pin 1 S S S G
Bottom 5 6 7 8
D D D D D
4 3 2...
