FDMC86102 - N-Channel MOSFET

onsemi

General Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Key Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A.
Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A.
Low Profile.
1 mm max in Power 33.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FDMC86102 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC86102
Manufacturer	onsemi
File Size	433.31 KB
Description	N-Channel MOSFET
Datasheet	FDMC86102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 20 A, 24 mW FDMC86102 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.