Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
100 V, 20 A, 24 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A
- Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- DC- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
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