| Part Number | FDMC86102 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain s.
* Shielded Gate MOSFET Technology * Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A * Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A * Low Profile * 1 mm max in Power 33 * 100% UIL Tested * This Device is Pb *Free, Halide Free and is RoHS Compliant Applications * DC *DC Conversion MAXIMUM RATINGS (TA = 25°C u. |
FDMC86102 Datasheet PDF
The FDMC86102 is a N-Channel MOSFET.
| Part Number | FDMC86102 Datasheet |
|---|---|
| Description | N-Channel Power Trench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switchi.
* Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A * Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A * Low Profile - 1 mm max in Power 33 * 100% UIL Tested * RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been espec. |