FDMC86102 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMC86102 Key Features
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- RoHS pliant
- DC Conversion