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FDMC86102 - N-Channel Power Trench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC - DC Conversion Top Bottom S Pin 1 S S D G D D D D D D D

Key Features

  • Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A.
  • Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A.
  • Low Profile - 1 mm max in Power 33.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC86102 N-Channel Power Trench® MOSFET March 2012 FDMC86102 N-Channel Power Trench® MOSFET 100 V, 20 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.