Datasheet Summary
FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 18 A, 23 mΩ
June 2014
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A
- Low Profile
- 1 mm max in Power 33
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
- DC
- DC Conversion
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Pin 1
SS S G
MLP...
