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FDMC86102L - MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced

Key Features

  • General.

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FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 18 A, 23 mΩ June 2014 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A „ Low Profile - 1 mm max in Power 33 „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC - DC Conversion Top Bottom Pin 1 SS S G S S D D MLP 3.3x3.