| Part Number | FDMC86102L Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain s.
* Shielded Gate MOSFET Technology * Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A * Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A * Low Profile * 1 mm Max in Power 33 * Pb *Free, Halide Free and RoHS Compliant Applications * DC *DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol . |
FDMC86102L Datasheet PDF
The FDMC86102L is a N-Channel MOSFET.
| Part Number | FDMC86102L Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Shielded Gate MOSFET Technology
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant
This N-Channel .
General Description
* Shielded Gate MOSFET Technology * Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A * Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A * Low Profile - 1 mm max in Power 33 * RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® proces. |