FDMC86102L Description
This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMC86102L Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
- Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A
- Low Profile
- 1 mm Max in Power 33
- Pb-Free, Halide Free and RoHS pliant