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FDMC86102LZ - N-Channel MOSFET

General Description

This N

onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

S zener has been added to enh

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A.
  • Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A.
  • HBM ESD Protection Level > 6 kV Typical (Note 4).
  • 100% UIL Tested.
  • RoHS Compliant.

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MOSFET - N-Channel, Shielded Gate, POWERTRENCH) 100 V, 24 mW , 22 A FDMC86102LZ Description This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A • Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.