FDMC86102LZ Description
This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level.
FDMC86102LZ Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A
- Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A
- HBM ESD Protection Level > 6 kV Typical (Note 4)
- 100% UIL Tested
- RoHS pliant