FDMC86102 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMC86102 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A
- Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant