FDMC86116LZ - N-Channel Power MOSFET

onsemi

General Description

This N

onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

S zener has been added to enh

Key Features

Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A.
Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A.
HBM ESD Protection Level > 3 kV Typical (Note 1).
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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FDMC86116LZ n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC86116LZ
Manufacturer	onsemi
File Size	576.97 KB
Description	N-Channel Power MOSFET
Datasheet	FDMC86116LZ Datasheet

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Other Datasheets by onsemi

Part Number	Description
FDMC86116LZ-L701	N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 7.5 A, 103 mW FDMC86116LZ, FDMC86116LZ-L701 General Description This N−Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features • Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A • Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A • HBM ESD Protection Level > 3 kV Typical (Note 1) • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Conversion DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.