Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
100 V, 16 A, 56 mW
General Description This N- Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 56 mW at VGS = 10 V, ID = 4 A
- Max rDS(on) = 90 mW at VGS = 6 V, ID = 3 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- 100% UIL Tested
- This Device is Pb- Free and is ROHS pliant
DATA SHEET .onsemi.
VDS 100 V rDS(on) MAX...
