Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
150 V, 13 A, 90 mW
General Description This N- Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max RDS(on) = 90 mW at VGS = 10 V, ID = 3.4 A
- Max RDS(on) = 125 mW at VGS = 6 V, ID = 2.9 A
- Advanced Package and Silicon bination for Low RDS(on) and High Efficiency
- 100% UIL Tested
- Pb- Free, Halide Free and RoHS pliant
Applications
- Primary MOSFET
- MV Synchronous Rectifier
MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS...
