Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- P-Channel, POWERTRENCH)
-150 V, -13 A, 107 mW
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 107 mW at VGS =
- 10 V, ID =
- 3 A
- Max rDS(on) = 137 mW at VGS =
- 6 V, ID =
- 2,7 A
- Very Low RDS- on Mid Voltage P Channel Silicon Technology
Optimized for Low Qg
- This Product is Optimised for Fast Switching Applications as well as
Load Witch Applications
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and RoHS pliant
Applications
- Active Clamp...
