Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
150 V, 25 A, 34 mW
General Description This N- Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A
- Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A
- High Performance Technology for Extremely Low RDS(on)
- 100% UIL Tested
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
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