Datasheet Details
| Part number | FDMC86260 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 214.20 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
 FDMC86260 Datasheet
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| Part number | FDMC86260 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 214.20 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
FDMC86260 Datasheet
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Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High performance technology for extremely low rDS(on) 100% UIL Tested Termination is Lead-free RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application DC-DC Conversion Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 150 ±20 16 5.4 48 121 54 2.3 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 2.3 53 °C/W Device Marking FDMC86260 Device FDMC86260 Package Power33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMC86260 Rev.
C1 1 www.fairchildsemi.com FDMC86260 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 120 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 150 V 11
FDMC86260 N-Channel Power Trench® MOSFET FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ December.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDMC86260 | N-Channel MOSFET | ON Semiconductor |
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FDMC86260ET150 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
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