FDMC86260 Overview
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High performance technology for extremely low rDS(on) 100% UIL Tested Termination is Lead-free RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching...
FDMC86260 Key Features
- Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A
- Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A
- High performance technology for extremely low rDS(on)
- 100% UIL Tested
- Termination is Lead-free
- RoHS pliant
- DC-DC Conversion
- Continuous -Continuous -Pulsed
- 55 to +150
- 9 mV/°C
