FDMC86260 Overview
This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMC86260 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A
- Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A
- High Performance Technology for Extremely Low RDS(on)
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS pliant
