Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
80 V, 22 A, 11.7 mW
General Description This N- Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
- Max rDS(on) = 11.7 mW at VGS = 10 V, ID = 10.7 A
- Max rDS(on) = 16 mW at VGS = 8 V, ID = 8.5 A
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb- Free, Halide Free and are RoHS pliant
Applications
- Primary DC- DC Switch
- Motor Bridge Switch
-...
