FDMC86320 Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC86320 Features

* Max rDS(on) = 11.7 mW at VGS = 10 V, ID = 10.7 A

* Max rDS(on) = 16 mW at VGS = 8 V, ID = 8.5 A

* MSL1 Robust Package Design

* 100% UIL Tested

* These Devices are Pb

* Free, Halide Free and are RoHS Compliant Applications

* Primary DC

FDMC86320 General Description

This N *Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and .

FDMC86320 Datasheet (263.79 KB)