FDMC8651 Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC8651 Features

* Max rDS(on) = 6.1 mW at VGS = 4.5 V, ID = 15 A Max rDS(on) = 9.3 mW at VGS = 2.5 V, ID = 12 A

* Low Profile

* 1 mm Max in Power 33

* 100% UIL Tested

* Pb

* Free, Halide Free and RoHS Compliant Applications

* Synchronous Rectifier

* 3.3

FDMC8651 General Description

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent.

FDMC8651 Datasheet (478.65 KB)