FDMC8651 Datasheet | Fairchild Semiconductor

FDMC8651 N-Channel Power Trench® MOSFET July 2008 N-Channel Power Trench® MOSFET 30 V, 20 A, 6.1 mΩ Features - Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A - Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A - Low Profile - 1 mm max in Power 33 - 100% UIL Tested - RoHS pliant General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various ponents of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low...