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FDMC8651 - N-Channel MOSFET

Description

of DC/DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Features

  • Max rDS(on) = 6.1 mW at VGS = 4.5 V, ID = 15 A Max rDS(on) = 9.3 mW at VGS = 2.5 V, ID = 12 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet preview – FDMC8651

Datasheet Details

Part number FDMC8651
Manufacturer ON Semiconductor
File Size 478.65 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8651 Datasheet
Additional preview pages of the FDMC8651 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 30 V, 20 A, 6.1 mW FDMC8651 General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic−level device. Features • Max rDS(on) = 6.1 mW at VGS = 4.5 V, ID = 15 A Max rDS(on) = 9.3 mW at VGS = 2.5 V, ID = 12 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant Applications • Synchronous Rectifier • 3.
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