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FDMC86570LET60 - N-Channel MOSFET

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Extended TJ Rating to 175°C.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A.
  • Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A.
  • High Performance Technology for Extremely Low rDS(on).
  • Termination is Lead.
  • free.
  • RoHS Compliant.

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Datasheet preview – FDMC86570LET60

Datasheet Details

Part number FDMC86570LET60
Manufacturer ON Semiconductor
File Size 478.75 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86570LET60 Datasheet
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Full PDF Text Transcription

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 60 V, 87 A, 4.3 mW FDMC86570LET60 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Extended TJ Rating to 175°C • Shielded Gate MOSFET Technology • Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A • Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A • High Performance Technology for Extremely Low rDS(on) • Termination is Lead−free • RoHS Compliant Applications • DC−DC Conversion DATA SHEET www.onsemi.com VDS 60 V rDS(on) MAX 4.3 mW @ 10 V 6.5 mW @ 4.5 V ID MAX 87 A Pin 1 Pin 1 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.
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