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FDMC86570LET60 - N-Channel MOSFET

FDMC86570LET60 Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 60 V, 87 A, 4.3 mW FDMC86570LET60 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

FDMC86570LET60 Features

* Extended TJ Rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A
* Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A
* High Performance Technology for Extremely Low rDS(on)
* Termination is Lead
* free

FDMC86570LET60 Applications

* DC
* DC Conversion DATA SHEET www. onsemi. com VDS 60 V rDS(on) MAX 4.3 mW @ 10 V 6.5 mW @ 4.5 V ID MAX 87 A Pin 1 Pin 1 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P (Power 33) CASE 483 AW MARKING DIAGRAM ZXYYKK FDMC 86570LT Z = Assembly Plant Code XYY = 3
* Digit

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N-Channel MOSFET ON Semiconductor
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