Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
60 V, 87 A, 4.3 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Extended TJ Rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A
- Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A
- High Performance Technology for Extremely Low rDS(on)
- Termination is Lead- free
- RoHS pliant
Applications
- DC- DC Conversion
DATA SHEET .onsemi.
VDS 60 V rDS(on) MAX 4.3 mW @ 10 V...
