FDMC86570LET60
Description
This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Extended TJ Rating to 175°C
- Shielded Gate MOSFET Technology
- Max r DS(on) = 4.3 m W at VGS = 10 V, ID = 18 A
- Max r DS(on) = 6.5 m W at VGS = 4.5 V, ID = 15 A
- High Performance Technology for Extremely Low r DS(on)
- Termination is Lead- free
- Ro HS pliant
Applications
- DC- DC Conversion
DATA SHEET .onsemi.
VDS 60 V r DS(on) MAX 4.3 m W @ 10 V 6.5 m W @ 4.5 V
ID MAX 87 A
Pin 1
Pin 1
SS SG
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P (Power 33)
CASE 483 AW
MARKING DIAGRAM
ZXYYKK FDMC 86570LT
= Assembly Plant Code
= 3- Digit Date Code Format
= 2- Alphanumeric Lot Run
Traceability Code
FDMC86570LT = Device Code
PIN ASSIGNMENT
S1
8D
S2 S3 G4
7D 6D 5D
ORDERING...
