FDMC8854 Datasheet, ON Semiconductor

* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A
* Low Profile − 1 mm Max in Power 33
* This Device is Pb−.

Features
* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A
*.

This N−Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications. Features
* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V,.