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FDMC8854 - N-Channel Power Trench MOSFET

General Description

Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A Low Profile - 1mm max in Power 33

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC8854 N-Channel PowerTrench® MOSFET February 2007 FDMC8854 N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ Features General Description „ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A „ Low Profile - 1mm max in Power 33 „ RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Application „ DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 4 3 2 1 www.DataSheet4U.