FDMC8854 Description
Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A Low Profile - 1mm max in Power 33 RoHS pliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Application DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 4 3 2 1.
FDMC8854 Key Features
- Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A
- Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A
- Low Profile
- 1mm max in Power 33
- RoHS pliant