FDMC8854 - N-Channel MOSFET

onsemi

General Description

This N

advanced Power Trench process.

It has been optimized for power management applications.

Key Features

Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A.
Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A.
Low Profile.
1 mm Max in Power 33.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FDMC8854 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC8854
Manufacturer	onsemi
File Size	231.80 KB
Description	N-Channel MOSFET
Datasheet	FDMC8854 Datasheet

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Part Number	Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 30 V, 15 A, 5.7 mW FDMC8854 General Description This N−Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications. Features • Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A • Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A • Low Profile − 1 mm Max in Power 33 • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • DC−DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.