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FDMC8854 - N-Channel MOSFET

Datasheet Summary

Description

This N

advanced Power Trench process.

It has been optimized for power management applications.

Features

  • Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A.
  • Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDMC8854

Datasheet Details

Part number FDMC8854
Manufacturer ON Semiconductor
File Size 231.80 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8854 Datasheet
Additional preview pages of the FDMC8854 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 30 V, 15 A, 5.7 mW FDMC8854 General Description This N−Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications. Features • Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A • Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A • Low Profile − 1 mm Max in Power 33 • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • DC−DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
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