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FDMD8430

Manufacturer: onsemi
FDMD8430 datasheet preview

Datasheet Details

Part number FDMD8430
Datasheet FDMD8430-ONSemiconductor.pdf
File Size 403.96 KB
Manufacturer onsemi
Description Dual N-Channel Power MOSFET
FDMD8430 page 2 FDMD8430 page 3

FDMD8430 Overview

This package integrates two N−Channel devices connected internally in mon−source configuration. This enables very low package parasitics and optimized thermal path to the mon source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.

FDMD8430 Key Features

  • Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A
  • Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A
  • Ideal for Flexible Layout in Secondary Side Synchronous
  • 100% UIL Tested
  • Termination is Lead-free and RoHS pliant
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