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FDMD8430 - Dual N-Channel Power MOSFET

Description

This package integrates two N Channel devices connected internally in common

source configuration.

This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.

Provides a very small footprint (3.3 x 5 mm) for higher power density.

Features

  • Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A.
  • Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A.
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
  • 100% UIL Tested.
  • Termination is Lead.
  • free and RoHS Compliant.

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Datasheet Details

Part number FDMD8430
Manufacturer onsemi
File Size 403.96 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet FDMD8430 Datasheet

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Full PDF Text Transcription

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FDMD8430 Dual N-Channel PowerTrench) MOSFET 30 V, 28 A, 2.12 mW General Description This package integrates two N−Channel devices connected internally in common−source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density. Features • Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A • Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A • Ideal for Flexible Layout in Secondary Side Synchronous Rectification • 100% UIL Tested • Termination is Lead−free and RoHS Compliant Applications • Isolated DC−DC Synchronous Rectifiers • Common Ground Load Switches www.onsemi.
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