Part FDMD8430
Description Dual N-Channel Power MOSFET
Category MOSFET
Manufacturer onsemi
Size 403.96 KB
onsemi
FDMD8430

Overview

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.

  • Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A
  • Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant