Datasheet Summary
Dual N-Channel PowerTrench) MOSFET
30 V, 28 A, 2.12 mW
General Description This package integrates two N- Channel devices connected internally in mon- source configuration. This enables very low package parasitics and optimized thermal path to the mon source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.
Features
- Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A
- Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A
- Ideal for Flexible Layout in Secondary Side Synchronous
Rectification
- 100% UIL Tested
- Termination is Lead- free and RoHS pliant
Applications
- Isolated DC- DC Synchronous Rectifiers
- mon Ground Load Switches
.onsemi...