FDMD8430 Datasheet - ON Semiconductor

Dual N-Channel Power MOSFET

FDMD8430 Features

* Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A

* Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A

* Ideal for Flexible Layout in Secondary Side Synchronous Rectification

* 100% UIL Tested

* Termination is Lead

* free and RoHS Compliant Applications

FDMD8430 General Description

This package integrates two N *Channel devices connected internally in common *source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density. Featur.

FDMD8430 Datasheet (403.96 KB)