Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Dual, N-Channel, Shielded Gate, POWERTRENCH)
100 V, 39 A, 10.5 mW
VDS 100 V rDS(on) MAX 10.5 mW @ 10 V 17.3 mW @ 6 V
ID MAX 39A
General Description This package integrates two N- Channel devices connected internally in mon- source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the mon source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
Features
- mon Source Configuration to Eliminate PCB Routing
- Large Source Pad on Bottom of Package for Enhanced Thermals
- Shielded Gate MOSFET Technology
- Max rDS(on) = 10.5...
