* Common Source Configuration to Eliminate PCB Routing
* Large Source Pad on Bottom of Package for Enhanced Thermals
* Shielded Gate MOSFET Technology
* Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A
* Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A
* I
FDMD86100 Datasheet (424.46 KB)
FDMD86100
424.46 KB
Dual n-channel mosfet.
DATA SHEET www.onsemi.com MOSFET Dual, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 39 A, 10.5 mW VDS 100 V rDS(on) MAX 10.5 mW @ 10 V 1.
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