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FDMD86100 - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

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FDMD86100 Dual N-Channel MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – FDMD86100

Datasheet Details

Part number	FDMD86100
Manufacturer	ON Semiconductor
File Size	424.46 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMD86100 Datasheet
Additional preview pages of the FDMD86100 datasheet.

Product details

Description

This package integrates two N Channel devices connected internally in common source configuration and incorporates Shielded Gate technology.

Features

Common Source Configuration to Eliminate PCB Routing.
Large Source Pad on Bottom of Package for Enhanced Thermals.
Shielded Gate MOSFET Technology.
Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A.
Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A.
Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
100% UIL tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 20, 2023 |