Datasheet4U Logo Datasheet4U.com

FDMD86100 Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 39 A, 10.5 mW VDS 100 V rDS(on) MAX 10.5 mW @ 10 V 17.

General Description

This package integrates two N−Channel devices connected internally in common−source configuration and incorporates Shielded Gate technology.

This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.

Provides a very small footprint (5 x 6 mm) for higher power density.

Key Features

  • Common Source Configuration to Eliminate PCB Routing.
  • Large Source Pad on Bottom of Package for Enhanced Thermals.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A.
  • Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A.
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
  • 100% UIL tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDMD86100 MOSFET Fairchild Semiconductor

More Datasheets from onsemi

Part Number Description
FDMD8630 N-Channel MOSFET
FDMD82100 Dual N-Channel MOSFET
FDMD8430 Dual N-Channel Power MOSFET
FDMD8540L Dual N-Channel MOSFET
FDMD8900 N-Channel Power MOSFET
FDM3622 N-Channel MOSFET
FDMA037N08LC N-Channel MOSFET
FDMA1023PZ Dual P-Channel MOSFET
FDMA1024NZ Dual N-Channel MOSFET
FDMA1027P Dual P-Channel MOSFET

FDMD86100 Distributor