Datasheet Summary
MOSFET
- Dual P-Channel POWERTRENCH)
-20 V, -2.6 A, 142 mW
Description This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra- portable applications. It Features two independent P- Channel MOSFETs with low on- state resistance for minimum conduction losses. When connected in the typical mon source configuration, bi- directional current flow is possible.
The MicroFET 1.6 y 1.6 Thin package offers exceptional thermal performance for it’s physical size and is well suited to switching and linear mode applications.
Features
- Max RDS(on) = 142 mW at VGS =
- 4.5 V, ID =
- 2.3 A
- Max RDS(on) = 213 mW at VGS...
