FDME820NZT Datasheet - ON Semiconductor

N-Channel MOSFET

* Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A

* Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A

* Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A

* Low Profile

* 0.55 mm maximum

* in the New Package MicroFET 1.6x1.6 Thin

* HBM ESD Protection Level

FDME820NZT

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N-channel mosfet.

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FDME820NZT N-Channel MOSFET ON Semiconductor

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