Datasheet Summary
MOSFET
- P-Channel POWERTRENCH)
-12 V, -8 A, 22 mW
General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on- state resistance.
The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Features
- Max RDS(on) = 22 mW at VGS =
- 4.5 V, ID =
- 8 A
- Max RDS(on) = 26 mW at VGS =
- 2.5 V, ID =
- 7.3 A
- Max RDS(on) = 97 mW at VGS =
- 1.8 V, ID =
- 3.8 A
- Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
- Free from Halogenated pounds and...
