Datasheet Summary
FDME905PT P-Channel PowerTrench® MOSFET
P-Channel PowerTrench® MOSFET
-12 V, -8 A, 22 mΩ
Features
- Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
- Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
- Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
- Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
- Free from halogenated pounds and antimony oxides
- RoHS pliant
October 2013
General Description
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for...
