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MOSFET – P-Channel POWERTRENCH)
-12 V, -8 A, 22 mW
FDME905PT
General Description This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance.
The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Features
Max RDS(on) = 22 mW at VGS = −4.5 V, ID = −8 A Max RDS(on) = 26 mW at VGS = −2.5 V, ID = −7.3 A Max RDS(on) = 97 mW at VGS = −1.8 V, ID = −3.8 A Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.
FDME905PT Datasheet
