FDMQ8403 - N-Channel MOSFET

onsemi

General Description

This quad MOSFET solution provides ten

in power dissipation over diode bridge.

Key Features

Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A.
Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A.
Substantial Efficiency Benefit in PD Solutions.
This Device is Pb.
Free, Halid Free and is RoHS Compliant.

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FDMQ8403 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMQ8403
Manufacturer	onsemi
File Size	336.59 KB
Description	N-Channel MOSFET
Datasheet	FDMQ8403 Datasheet

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MOSFET – N-Channel, POWERTRENCH), GreenBridget Series of High-Efficiency Bridge Rectifiers 100 V, 6 A, 110 mW FDMQ8403 General Description This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Features • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A • Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A • Substantial Efficiency Benefit in PD Solutions • This Device is Pb−Free, Halid Free and is RoHS Compliant Applications • High−Efficiency Bridge Rectifiers MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current A − Continuous (Package Limited) TC = 25°C 6 − Continuous (Silicon Limited) TC = 25°C 9 − Continuous (Note 1a.