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MOSFET – N-Channel, POWERTRENCH), GreenBridget Series of High-Efficiency Bridge Rectifiers
100 V, 6 A, 110 mW
FDMQ8403
General Description This quad MOSFET solution provides ten−fold improvement
in power dissipation over diode bridge.
Features
• Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A • Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A • Substantial Efficiency Benefit in PD Solutions • This Device is Pb−Free, Halid Free and is RoHS Compliant
Applications
• High−Efficiency Bridge Rectifiers
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Rating
Value Unit
VDS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
A
− Continuous (Package Limited) TC = 25°C 6
− Continuous (Silicon Limited) TC = 25°C 9
− Continuous (Note 1a.
FDMQ8403 Datasheet
