FDMQ86530L Datasheet - ON Semiconductor

N-Channel MOSFET

* Max RDS(on) = 17.5 mW at VGS = 10 V, ID = 8 A

* Max RDS(on) = 23 mW at VGS = 6 V, ID = 7 A

* Max RDS(on) = 25 mW at VGS = 4.5 V, ID = 6.5 A

* Substantial Efficiency Benefit in PD Solutions

* This Device is Pb

* Free, Halide Free, and RoHS Compliant App

FDMQ86530L

310.04 KB

N-channel mosfet.

📁 Related Datasheet

FDMQ86530L N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDMQ8203 Dual N-Channel and Dual P-Channel Power MOSFET (ON Semiconductor)

FDMQ8205 2 Series of High-Efficiency Bridge Rectifiers (Fairchild Semiconductor)

FDMQ8205 High-Efficiency Bridge Rectifiers (ON Semiconductor)

FDMQ8205A High-Efficiency Bridge Rectifiers (ON Semiconductor)

FDMQ8205A High-Efficiency Bridge Rectifiers (Fairchild Semiconductor)

FDMQ8403 N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDMQ8403 N-Channel MOSFET (ON Semiconductor)

FDM-2B FDM-2B (ETC)

TAGS

FDMQ86530L N-Channel MOSFET ON Semiconductor

Image Gallery