Datasheet Summary
MOSFET
- N-Channel POWERTRENCH)
75 V, 100 A, 3.7 mW
Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been tailored to minimize the on- state resistance and while maintaining superior switching performance.
Features
- RDS(on) = 3.01 mW (Typ.) @ VGS = 10 V, ID = 50 A
- Low FOM RDS(on)- QG
- Low Reverse Recovery Charge, Qrr = 80 nC
- Soft Reverse Recovery Body Diode
- Enables Highly Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- These Device is Pb- Free and RoHS pliant
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection circuit
- DC Motor Drives and...
