Datasheet Summary
MOSFET
- N-Channel, UltraFET Trench
200 V, 20 A, 77 mW
General Description UItraFETt devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- Max rDS(on) = 77 mW at VGS = 10 V, ID = 3.7 A
- Max rDS(on) = 88 mW at VGS = 6 V, ID = 3.5 A
- Low Miller Charge
- This Device is Pb- Free and is RoHS pliant
Application
- DC- DC Conversion
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current:
-...
